The benefits of MoSys technology go beyond its superior density, speed, low power and economy. They also include manufacturability and process scalability. MoSys 1T-SRAM
® uses a standard logic process technology (unlike embedded DRAM) and is highly scalable to smaller geometries and easily portable to different manufacturers’ processes.
Over the past 10 years, MoSys technology has scaled down continuously and rapidly from 250nm to finer geometries. MoSys solutions are currently in volume production 90nm, sampling at 65nm and in development at 55nm and 45nm. In all cases, MoSys has kept pace with new process nodes as soon as they have come on line.
The same is true of migration from one manufacturer’s process to another’s. MoSys is currently offered in a range of processes by the world’s leading foundries, such as Chartered, SMIC, TSMC and UMC. A number of independent device manufacturers (IDMs) and other customers who directly license MoSys technology have likewise ported 1T-SRAM to their leading-edge processes.
MoSys provides comprehensive design and engineering support to ensure smooth migration to new nodes and processes.